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Tantalum Pentoxide Sputtering Target (Ta₂O₅)

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The S4R Tantalum Pentoxide Sputtering Target (Ta₂O₅) is manufactured from 99.99% (4N) tantalum pentoxide ceramic for physical vapor deposition (PVD) and RF magnetron sputtering applications.

Tantalum pentoxide is an electrically insulating high-k oxide valued for its high refractive index, dielectric properties and chemical stability. Ta₂O₅ sputtering targets are suitable for the deposition of high-k dielectric films, optical coatings, capacitor dielectric layers, waveguide structures, semiconductor devices and advanced thin-film research.

Standard S4R targets are supplied as circular discs in 2-inch and 3-inch diameters with a nominal thickness of 3 mm. Alternative dimensions, thicknesses and bonded configurations are available upon request.

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Sputtering and Compatibility

Tantalum pentoxide is an electrically insulating oxide ceramic. RF magnetron sputtering is therefore the recommended standard deposition method for direct sputtering from a Ta₂O₅ target.

Actual deposition conditions depend on the sputtering-source design, RF generator and matching network, applied RF power and power density, working pressure, process-gas composition, target-to-substrate distance, substrate material and temperature, target cooling and required film properties.

S4R does not specify universal RF power, working pressure, oxygen content, substrate temperature or deposition rate. These parameters must be established according to the sputtering system, target dimensions and required film characteristics.

The stoichiometry, density, crystallinity, dielectric properties and optical properties of deposited Ta₂O₅ films may vary with process conditions, oxygen partial pressure, substrate temperature and post-deposition treatment. The crystalline phase of the deposited film should therefore not be assumed to reproduce that of the bulk target.

Because Ta₂O₅ ceramic targets are brittle and may be sensitive to thermal gradients, appropriate cooling, uniform thermal contact and progressive power conditioning are recommended during operation.

Bonding services, backing plates, alternative thicknesses and custom target dimensions are available upon request.

Specification
Product Name Tantalum Pentoxide Sputtering Target
Material Tantalum Pentoxide
Chemical Formula Ta₂O₅
Common Name Tantalum(V) Oxide
CAS Number 1314-61-0
Purity 99.99% (4N)
Material Type Oxide Ceramic
Crystal Phase Not Specified
Electrical Character Electrical Insulator / High-k Dielectric
Calculated Molar Mass Approximately 441.89 g/mol
Typical Applications High-k Dielectric Films, Optical Coatings, Capacitor Dielectric Layers, Waveguide Structures, Semiconductor Devices and Thin-Film Research
Shape Circular Disc
Standard Target Diameters Ø50.8 mm (2 in.), Ø76.2 mm (3 in.)
Standard Target Thickness 3 mm
Standard Target Sizes Ø50.8 × 3 mm (2 in.), Ø76.2 × 3 mm (3 in.)
Appearance White to Off-White Ceramic; Appearance May Vary by Batch
Recommended Sputtering Mode RF Magnetron Sputtering
Alternative Thicknesses Available Upon Request
Bonded Configuration Available Upon Request
Custom Dimensions Available Upon Request

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