Silicon Nitride Sputtering Target (Si₃N₄)
The S4R Silicon Nitride Sputtering Target (Si₃N₄) is manufactured from 99.99% (4N) silicon nitride ceramic for physical vapor deposition (PVD) and RF magnetron sputtering applications.
Silicon nitride is an electrically insulating nitride ceramic valued for its high hardness, chemical resistance, thermal stability and dielectric properties. Si₃N₄ sputtering targets are suitable for the deposition of dielectric and passivation layers, protective and barrier coatings, semiconductor thin films, optical coatings and advanced thin-film research.
Standard S4R targets are supplied as circular discs in 2-inch and 3-inch diameters with a nominal thickness of 3 mm. Alternative dimensions, thicknesses and bonded configurations are available upon request.
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Sputtering and Compatibility
Silicon nitride is an electrically insulating ceramic material. RF magnetron sputtering is therefore the recommended standard deposition method for direct sputtering from a Si₃N₄ target.
Actual deposition conditions depend on the sputtering-source design, RF generator and matching network, applied RF power and power density, working pressure, process-gas composition, target-to-substrate distance, substrate material and temperature, target cooling and required film properties.
S4R does not specify universal RF power, working pressure, nitrogen content, substrate temperature or deposition rate. These parameters must be established according to the sputtering system, target dimensions and required film characteristics.
The stoichiometry, density, residual stress, refractive index, dielectric properties and microstructure of deposited silicon nitride films may vary with process conditions, nitrogen partial pressure, substrate temperature and post-deposition treatment. The deposited film should therefore not be assumed to reproduce the composition or structure of the bulk target exactly.
Because Si₃N₄ ceramic targets are brittle and may be sensitive to thermal gradients, appropriate target cooling, uniform thermal contact and progressive power conditioning are recommended during operation.
Bonding services, backing plates, alternative thicknesses and custom target dimensions are available upon request.
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