Skip to Content

Hafnium Oxide Sputtering Target (HfO₂)

https://www.s4r.fr/web/image/product.template/212/image_1920?unique=8014598

The S4R Hafnium Oxide Sputtering Target (HfO₂) is manufactured from 99.99% (4N) hafnium oxide ceramic for physical vapor deposition (PVD) and RF magnetron sputtering applications.

Hafnium oxide, also known as hafnium dioxide, is a high-k dielectric oxide valued for its high dielectric constant, thermal stability and chemical stability. HfO₂ sputtering targets are suitable for the deposition of high-k dielectric films, semiconductor dielectric layers, optical coatings, protective coatings and advanced thin-film research.

Standard S4R targets are supplied as circular discs in 2-inch and 3-inch diameters with a nominal thickness of 3 mm. Alternative dimensions, thicknesses and bonded configurations are available upon request.

0.00 € 0.0 EUR 0.00 €

Worldwide shipping

Shipping costs and lead time confirmed with your quotation.

Secure payment

Card payment and purchase orders accepted.

Technical support

Configuration and compatibility support from our engineers.

Pricing available to approved customers

Sign in to view your pricing, or request access to an S4R professional account.

  • Target Size

This combination does not exist.

Request Pricing Access

Sputtering and Compatibility

Hafnium oxide is an electrically insulating oxide ceramic. RF magnetron sputtering is therefore the recommended standard deposition method for direct sputtering from an HfO₂ target.

Actual deposition conditions depend on the sputtering-source design, RF generator and matching network, applied RF power and power density, working pressure, process-gas composition, target-to-substrate distance, substrate material and temperature, target cooling and required film properties.

S4R does not specify universal RF power, working pressure, oxygen content, substrate temperature or deposition rate. These parameters must be established according to the sputtering system, target dimensions and required film characteristics.

The stoichiometry, density, crystallinity, dielectric properties and optical properties of deposited HfO₂ films may vary with process conditions, oxygen partial pressure, substrate temperature and post-deposition treatment. The crystalline phase of the deposited film should therefore not be assumed to reproduce that of the bulk target.

Because HfO₂ ceramic targets are brittle and may be sensitive to thermal gradients, appropriate cooling, uniform thermal contact and progressive power conditioning are recommended during operation.

Bonding services, backing plates, alternative thicknesses and custom target dimensions are available upon request.

Specification
Product Name Hafnium Oxide Sputtering Target
Material Hafnium Oxide
Chemical Formula HfO₂
Common Name Hafnium Dioxide
CAS Number 12055-23-1
Purity 99.99% (4N)
Material Type Oxide Ceramic
Crystal Phase Not Specified
Electrical Character Electrical Insulator / High-k Dielectric
Calculated Molar Mass Approximately 210.49 g/mol
Typical Applications High-k Dielectric Films, Semiconductor Dielectric Layers, Optical Coatings, Protective Coatings and Thin-Film Research
Shape Circular Disc
Standard Target Diameters Ø50.8 mm (2 in.), Ø76.2 mm (3 in.)
Standard Target Thickness 3 mm
Standard Target Sizes Ø50.8 × 3 mm (2 in.), Ø76.2 × 3 mm (3 in.)
Appearance White to Light Gray Ceramic; Appearance May Vary by Batch
Recommended Sputtering Mode RF Magnetron Sputtering
Alternative Thicknesses Available Upon Request
Bonded Configuration Available Upon Request
Custom Dimensions Available Upon Request

Our latest content

Check out what's new in our company !

Your Dynamic Snippet will be displayed here... This message is displayed because you did not provide both a filter and a template to use.