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Aluminum Oxide Sputtering Target (Al₂O₃)

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The S4R Aluminum Oxide Sputtering Target (Al₂O₃) is manufactured from high-purity aluminum oxide ceramic for physical vapor deposition (PVD) and RF magnetron sputtering applications.

Aluminum oxide, also known as alumina, is a widely used electrically insulating ceramic offering high chemical stability, hardness and thermal resistance. Al₂O₃ sputtering targets are suitable for the deposition of dielectric, insulating, optical, protective and barrier thin films for semiconductor devices, optics, sensors, microelectronics and advanced materials research.

Standard S4R targets are supplied as circular discs in 2-inch and 3-inch diameters with a nominal thickness of 3 mm. Alternative dimensions, thicknesses and bonded configurations are available upon request.

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Sputtering and Compatibility

Aluminum oxide is an electrically insulating ceramic material. RF magnetron sputtering is therefore the recommended standard deposition method for direct sputtering from an Al₂O₃ target.

Actual deposition conditions depend on the sputtering-source design, RF generator and matching network, applied RF power and power density, working-gas pressure and flow rate, process-gas composition, target-to-substrate distance, substrate material and temperature, target cooling and required thin-film properties.

S4R does not specify universal RF power, working pressure, substrate temperature or deposition-rate conditions. These parameters must be established according to the sputtering system, target dimensions and required film characteristics.

Because Al₂O₃ ceramic targets are brittle and electrically insulating, appropriate target cooling, uniform thermal contact and progressive power conditioning are recommended during initial operation. Excessive localized heating or thermal gradients may increase the risk of target damage.

The composition, density, microstructure and optical or dielectric properties of the deposited film may differ from those of the bulk Al₂O₃ target. Plasma conditions, working pressure, substrate temperature, energetic-particle bombardment and post-deposition treatment can influence the resulting thin-film properties.

Bonding services, backing plates, alternative thicknesses and custom target dimensions are available upon request.

Specification
Product Name Aluminum Oxide Sputtering Target
Material Aluminum Oxide
Chemical Formula Al₂O₃
Common Name Alumina
Purity 99.99% (4N)
Material Type Oxide Ceramic
Electrical Character Electrical Insulator / Dielectric
Calculated Molar Mass Approximately 101.96 g/mol
Typical Applications Dielectric Films, Insulating Layers, Optical Coatings, Protective Coatings and Barrier Films
Shape Circular Disc
Standard Target Diameters Ø50.8 mm (2 in.), Ø76.2 mm (3 in.)
Standard Target Thickness 3 mm
Standard Target Sizes Ø50.8 × 3 mm (2 in.), Ø76.2 × 3 mm (3 in.)
Appearance White to Off-White Ceramic
Recommended Sputtering Mode RF Magnetron Sputtering
Alternative Thicknesses Available Upon Request
Bonded Configuration Available Upon Request
Custom Dimensions Available Upon Request

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