Aluminum Nitride Sputtering Target (AlN)
The S4R Aluminum Nitride Sputtering Target (AlN) is manufactured from 99.9% (3N) aluminum nitride ceramic for physical vapor deposition (PVD) and RF magnetron sputtering applications.
Aluminum nitride is a high-resistivity, wide-bandgap nitride semiconductor valued for its piezoelectric properties, high thermal stability, chemical resistance and excellent thermal conductivity. AlN sputtering targets are suitable for the deposition of piezoelectric thin films, acoustic-device layers, MEMS structures, dielectric and insulating layers, semiconductor buffer layers, optoelectronic structures and advanced thin-film research.
Standard S4R targets are supplied as circular discs in 2-inch and 3-inch diameters with a nominal thickness of 3 mm. Alternative dimensions, thicknesses and bonded configurations are available upon request.
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Sputtering and Compatibility
Aluminum nitride is a high-resistivity ceramic material. RF magnetron sputtering is therefore the recommended standard deposition method for direct sputtering from an AlN target.
Actual deposition conditions depend on the sputtering-source design, RF generator and matching network, applied RF power and power density, working pressure, process-gas composition, target-to-substrate distance, substrate material and temperature, target cooling and required film properties.
Nitrogen may be introduced into the process gas when required to control film stoichiometry and nitrogen content. S4R does not specify universal RF power, working pressure, nitrogen flow, substrate temperature or deposition rate. These parameters must be established according to the sputtering system, target dimensions and required film characteristics.
The stoichiometry, crystallographic orientation, residual stress, dielectric properties, piezoelectric response and microstructure of deposited AlN films may vary with process conditions, nitrogen partial pressure, substrate temperature and post-deposition treatment. The deposited film should therefore not be assumed to reproduce the structure or properties of the bulk target exactly.
Because AlN ceramic targets are brittle and may be sensitive to thermal gradients, appropriate target cooling, uniform thermal contact and progressive power conditioning are recommended during operation.
Bonding services, backing plates, alternative thicknesses and custom target dimensions are available upon request.
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