Silicon Dioxide Sputtering Target (SiO₂)
The S4R Silicon Dioxide Sputtering Target (SiO₂) is manufactured from 99.99% (4N) silicon dioxide for physical vapor deposition (PVD) and RF magnetron sputtering applications.
Silicon dioxide is a widely used dielectric oxide material combining high electrical resistivity, chemical stability and valuable optical properties. SiO₂ sputtering targets are suitable for the deposition of dielectric and insulating layers, optical coatings, passivation films, barrier layers and protective thin films for semiconductor devices, optics, sensors, microelectronics and advanced materials research.
Standard S4R targets are supplied as circular discs in 2-inch, 3-inch and 4-inch diameters with a nominal thickness of 0.125 inch. Alternative dimensions, thicknesses and bonded configurations are available upon request.
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Sputtering and Compatibility
Silicon dioxide is an electrically insulating oxide material. RF magnetron sputtering is therefore the recommended standard deposition method for direct sputtering from a SiO₂ target.
Actual deposition conditions depend on the sputtering-source design, RF generator and matching network, applied RF power and power density, working-gas pressure and flow rate, argon and optional oxygen gas composition, target-to-substrate distance, substrate material and temperature, substrate bias and rotation, target cooling, and the required thin-film properties.
S4R does not specify universal RF power, working pressure, substrate temperature or deposition-rate conditions. These parameters must be established according to the sputtering system, target dimensions and required film characteristics.
Because SiO₂ targets are brittle and electrically insulating, appropriate target cooling, uniform thermal contact and progressive power conditioning are recommended during initial operation. Excessive localized heating or thermal gradients may increase the risk of target damage.
The composition, density, microstructure, stoichiometry and optical properties of the deposited film should not be assumed to reproduce those of the bulk SiO₂ target exactly. Plasma conditions, working pressure, oxygen partial pressure, substrate temperature, energetic-particle bombardment and post-deposition treatment can influence the resulting thin-film properties.
Bonding services, backing plates, alternative thicknesses and custom target dimensions are available upon request. Final mechanical and thermal compatibility should be confirmed according to the customer's sputtering cathode and mounting system.
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