Lithium Nickel Manganese Oxide Sputtering Target (LiNi₀.₅Mn₁.₅O₄, LNMO)
The S4R Lithium Nickel Manganese Oxide Sputtering Target is manufactured from high-purity LiNi₀.₅Mn₁.₅O₄ ceramic for physical vapor deposition and magnetron sputtering applications.
Lithium nickel manganese oxide, commonly designated LNMO, is a cobalt-free lithium transition-metal oxide investigated as a high-voltage positive-electrode material for lithium-ion batteries. Its nominal composition has a nickel-to-manganese molar ratio of 1:3 and belongs to the spinel family.
In thin-film form, LNMO is relevant to lithium-ion microbattery research, all-solid-state battery development, cathode–electrolyte interface studies and high-voltage electrochemical thin-film research. The composition, structure and electrochemical properties of the deposited film depend on the deposition parameters, substrate, atmosphere and any subsequent thermal treatment.
The standard S4R configuration is supplied as a 2-inch ceramic target indium-bonded to a 3 mm thick copper backing plate, with a purity of 99.9% (3N):
- Target diameter: Ø50.8 mm (2 in.)
- LNMO target thickness: 3.18 mm (0.125 in.)
- Copper backing plate thickness: 3 mm
- Total nominal assembly thickness: approximately 6.18 mm, excluding the bonding layer
- Standard bonding method: indium bonding
- Purity: 99.9% (3N)
- Nominal composition: LiNi₀.₅Mn₁.₅O₄
- Ni:Mn molar ratio: 1:3
Alternative target dimensions, backing-plate materials, backing-plate geometries, bonding methods and unbonded configurations may be available upon request. Final compatibility must be confirmed according to the customer’s sputtering cathode and mounting system.
The standard product corresponds to nominal LiNi₀.₅Mn₁.₅O₄. Lithium-enriched, oxygen-deficient, doped or otherwise modified compositions must be identified separately and should not be considered equivalent to the standard material.
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Sputtering and Compatibility
LNMO is a multicomponent ceramic oxide. RF magnetron sputtering is therefore the recommended standard starting method for this target configuration.
The copper backing plate provides mechanical support and promotes heat transfer between the ceramic target and the cooled sputtering cathode. The indium bonding layer improves thermal contact while accommodating part of the difference in thermal expansion between the ceramic target and the metallic backing plate.
Actual deposition conditions depend on:
- sputtering-source design;
- RF generator and matching network;
- target density, porosity and microstructure;
- chemical homogeneity and lithium content;
- oxygen stoichiometry;
- bonding quality and cathode cooling;
- sputtering-gas composition and pressure;
- substrate material and temperature;
- desired film composition and crystallinity;
- post-deposition thermal treatment.
S4R does not specify a universal RF power, gas pressure, substrate temperature or annealing condition. These parameters must be developed according to the customer’s equipment and required film properties.
The deposited film should not automatically be assumed to reproduce the bulk target composition or crystalline structure exactly. Lithium loss, preferential sputtering, oxygen non-stoichiometry and post-deposition thermal treatment may affect the final film. Its elemental composition and phase should therefore be verified experimentally.
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