Lithium Iron Phosphate Sputtering Target (LiFePO₄, LFP)
The S4R Lithium Iron Phosphate Sputtering Target is manufactured from high-purity LiFePO₄ ceramic for physical vapor deposition and magnetron sputtering applications.
Lithium iron phosphate is an olivine-type lithium transition-metal phosphate widely used as a cathode material in lithium-ion battery research. In thin-film form, it is relevant to microbattery development, solid-state battery research, cathode–electrolyte interface studies and electrochemical thin-film characterization. RF magnetron sputtering has been used experimentally to deposit LiFePO₄-based thin films for lithium microbattery and battery-electrode research.
The standard S4R configuration is supplied as a 2-inch ceramic target indium-bonded to a 3 mm thick copper backing plate, with a nominal material purity of 99.99% (4N):
- Target diameter: Ø50.8 mm (2 in.)
- LiFePO₄ target thickness: 3.18 mm (0.125 in.)
- Copper backing plate thickness: 3 mm
- Total nominal assembly thickness: approximately 6.18 mm, excluding the bonding layer
- Standard bonding method: indium bonding
Alternative target dimensions, backing-plate materials, backing-plate geometries, bonding methods and unbonded configurations may be available upon request. Final compatibility must be confirmed according to the customer’s sputtering cathode and mounting system.
The standard composition is specified as LiFePO₄. Carbon-containing, lithium-enriched, doped or otherwise modified compositions must be identified separately and should not be considered equivalent to the standard stoichiometric material.
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Sputtering and Compatibility
LiFePO₄ is a ceramic material, so RF magnetron sputtering is the recommended standard starting method. RF magnetron sputtering has been reported for the preparation of LiFePO₄ thin-film cathodes and related LiFePO₄/carbon films.
The copper backing plate provides mechanical support and improves heat transfer between the ceramic target and the cooled sputtering cathode. The indium bonding layer provides thermal contact while accommodating part of the thermal-expansion difference between the ceramic and metallic components.
Actual deposition conditions depend on:
- sputtering-source design;
- RF generator and matching network;
- target density and microstructure;
- exact target composition;
- bonding and cooling quality;
- process-gas conditions;
- substrate material and temperature;
- desired film composition and crystallinity;
- any intended post-deposition heat treatment.
S4R does not specify universal RF power, gas pressure, substrate temperature or annealing conditions. These parameters must be developed for the customer’s equipment and required film properties.
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